MRF9080LR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
(IN FREESCALE BROADBAND GSM 900 OPTIMIZED DEMO BOARD)
0 1 1.2 1.4 1.6 1.80.4 0.6 0.8
0
5
10
15
20
25
30
35
Pin, INPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
f, FREQUENCY (MHz)
Figure 6. Power Gain versus Output Power
Figure 7. Power Gain and Input Return Loss
versus Frequency
Pin, INPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 8. Output Power and Efficiency versus
Input Power
Figure 9. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)
Pout
VDD
= 26 Vdc
IDQ
= 600 mA
f = 940 MHz
P
out
, OUTPUT POWER (WATTS)
15
850 870 1010890 910 930 950 970 990 1030 1050
?30
Pout
= 20 W
16
17
18
19
20
21
00 1 1.20.2
0.4 0.6 0.8
161 10 100
18
19
20
17
Pout, OUTPUT POWER (WATTS)
G
ps
, POWER GAIN (dB)
171 10 100
18
19
20
21
Pout, OUTPUT POWER (WATTS)
G
ps
, POWER GAIN (dB)
171 10 100
18
19
20
Figure 10. Output Power and Efficiency versus Input
Power
G
ps
, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)
P
out
, OUTPUT POWER (WATTS)
800 mA
IDQ
= 1000 mA
VDD
= 26 Vdc
f = 940 MHz
T = 25°C
600 mA
400 mA
IDQ
= 600 mA
f = 940 MHz
T = 25°C
VDD
= 22 Vdc
30 Vdc
26 Vdc
VDD
= 26 Vdc
IDQ
= 600 mA
T = 25°C
Gps
IRL
70 W
Pout
= 20 W
70 W
?25
?20
?15
?10
?5
0
0
1.4 1.6 1.8
10
20
30
40
50
60
IRL, INPUT RETURN LOSS (dB)
VDD
= 26 Vdc
IDQ
= 600 mA
f = 940 MHz
T = 25°C
120
110
100
90
80
70
60
50
40
30
20
10
VDD
= 26 Vdc
IDQ
= 600 mA
f = 940 MHz
25°C
50°C
85°C
110
100
90
80
70
60
50
40
30
20
10
0
0.2
Pout
25°C
85°C
25°C
85°C
40
45
50
55
LIFETIME BUY
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
发布紧急采购，3分钟左右您将得到回复。
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